Vishay Intertechnology, Inc expanded its family of n-channel TrenchFET® power MOSFETs in the thermally enhanced PowerPAK® SC-75 package to offer a VDS range from 8 V to 30 V. The devices released today include the industry's first 30-V device in the 1.6-mm by 1.6-mm footprint area, and a 20-V MOSFET with the industry's lowest on-resistance.
The new 30-V SiB408DK and 20-V SiB412DK join the previously released Siliconix SiB414DK, the first 8-V single n-channel power MOSFET in the PowerPAK SC-75 footprint area. On-resistance for the SiB408DK is as low as 40 m? at 10 V, while the SiB412DK offers an on-resistance down to 34 m? at 4.5 V, which is 21 % lower than the closest competing device.
The PowerPAK SC-75 package measures 1.6 mm by 1.6 mm by 0.8 mm. This is 36 % smaller than 2-mm by 2-mm devices and 72 % smaller than widely used TSOP-6 devices, while offering similar on-resistance. For designers, the smaller size of the PowerPAK SC-75 saves space and reduces power consumption in portable electronics, allowing for increased functionality while meeting consumer expectations for battery run times.
Typical applications for the n-channel PowerPAK SC-75 power MOSFETs will include load, PA, and battery switches in portable electronics. The devices will also save space in 1/8th or 1/16th bricks compared to common 3-mm by 3-mm packages. The SiB408DK will also be used for load switching in notebook computers and netbooks.
The devices are halogen-free in accordance with IEC 61249-2-21 and are compliant with RoHS Directive 2002/95/EC. The MOSFETs are 100 % Rg and UIS tested.