Powerex has created with a low profile and multiple circuit topologies, including independent; dual; in parallel; common collector; and common emitter, two new Powerex split dual SiC MOSFET Modules (QJD1210010 and QJD1210011) designed for use in high frequency applications.
Each module consists of two MOSFET Silicon Carbide transistors, with each transistor having a reverse-connected Zero Recovery® free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Product Ratings and Characteristics -Rated at 100A/1200V, QJD1210010 and QJD1210011 feature:
- 175°C Junction temperature
- Silicon carbide chips
- Low internal inductance
- Industry leading RDS(ON)
- High speed switching
- Low switching losses
- Low capacitance
- Low drive requirement
- High power density
- Isolated baseplate
- 2 individual switches per module
- Copper baseplate on QJD1210010 and, for extended thermal cycle life, AlSiC baseplate on QJD1210011
QJD1210010 can be purchased at sample pricing at $3,055 each. QJD1210011 can be purchased at sample pricing at $3,175 each.