Efficient Power Conversion Corporation announce the introduction of the EPC2001 and EPC2015, two lead-free, RoHS-compliant (Restriction of Hazardous Substances) enhancement-mode gallium nitride on silicon (eGaN) FETs.
The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40 VDS with a maximum RDS(ON) of 4 milliohms. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.
Applications that benefit from eGaN FET performance increases include DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits and telecom base stations.
"Protection of the environment is a high priority for EPC and a driving force for offering lead-free, RoHS-compliant eGaN FETs. The EPC2001 and EPC2015 are the first lead free and RoHS compliant eGaN FETs to be introduced and it is our plan to have all eGaN FETs available lead-free and RoHS-compliant within the next 4 months." said Alex Lidow, co-founder and CEO.
An application note detailing the performance improvements of these next generation devices can be found at: