Alpha and Omega Semiconductor Limited ("AOS) introduces a new line of Insulated Gate Bipolar Transistors (IGBTs) to meet the growing need for energy efficient switching devices for motor control and power conversion applications.
AOS continues to execute its strategy to be a full service power solution provider by introducing its proprietary 600V IGBT technology platform. The IGBT devices combine a unique cell structure and vertical field stop technique to provide users with best-in-class performance, reducing both conduction and switching losses without compromising short-circuit robustness. The new technology platform is designed for ease-of-use and easy paralleling of devices for high current applications. The low QGC/QGE ratio allows the devices to withstand higher dV/dt transients and prevents oscillation issues in bridge applications. The IGBT platform incorporates the world's thinnest IGBT devices fabricated on large diameter 200mm wafers, combined with cutting-edge deep trench technology to raise the bar for IGBT performance. The devices will be available in TO247, TO-220, TO-220F, TO-262, TO-262F and D2PAK packages.