Power Electronics
eGaN® Power Transistor Family Capable of Multiple GHz Range

eGaN® Power Transistor Family Capable of Multiple GHz Range

Efficient Power Conversion Corporation extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS.  Optimized for high speed switching, the EPC8010 has a maximum RDS(on) of 160 milliohms and input gate charge in the hundreds of pico-coulombs. This device has switching transition speeds in the sub nano-second range, making it uniquely capable of hard-switching applications above 10 MHz. Even beyond the 10MHz for which they were designed, this product exhibits very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications. Applications benefiting from the low power, compact, high frequency EPC8010 include hard-switching power converters operating in the multi-megahertz range for envelope tracking, RF power amplifiers, and highly resonant wireless power transfer systems for wireless charging of mobile devices.

Additionally, an EPC9030 development board featuring two EPC8010 devices in a half-bridge configuration with minimum switching frequency of 500 kHz is available now. The purpose of this development board is to simplify the evaluation process of the EPC8010, providing a single board that can be easily connected into any existing converter.

Evaluation units of the EPC8010 are immediately available in 2- and 10-piece packs starting at $40 through Digi-Key Corporation at http://bit.ly/EPC8010DK The EPC9030 development board is available now for $150 through Digi-Key Corporation at http://bit.ly/EPC9030DK

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