Power Electronics

Dual-Power MOSFET Shrinks Mounting Area

From Renesas Technology America, the RJK0383DPA dual power MOSFET enables smaller, higher-efficiency synchronous-rectification dc-dc converters in communication devices and laptop PCs. It enables higher output current than the company's previous dual MOSFETs (see table below), combining high-side and low-side power MOSFETs and a Schottky barrier diode in a 5.3-mm x 6.2-mm x 0.8-mm max package with high thermal conductivity.

Device type: dual power MOSFET
Voltage rating (VDSS): 30 V
On-resistance (RDSON): 12 mΩ typ for high side and 3.7 mΩ typ for low side, both at VGS = 4.5 V
Drain-Gate Load (QGD): 1.5 nC for high side and 6.5 nC for low side, both at VDD =10 V
Current Rating (ID max): 15 A on high side MOSFET and 45 A on low-side MOSFET with Schottky diode on chip
Features: In a synchronous-rectification circuit converting a 12-V input to a 1.1-V output at 600 kHz switching frequency, dual MOSFET achieves 91.6% efficiency.
Operating temperature range (TJ): °C to °C
Packaging: 5.3-mm ¡¿6.2-mm ¡¿0.8-mm max WPAK
RoHS compliant? yes.
Target Applications: dc-dc converters in laptop PCs, communication devices and other products
Pricing: $0.89 each in sample quantities
Availability: available Q4 2008
Datasheets posted on web? yes, see http://documentation.renesas.com/eng/products/transistor/rej03g1723_rjk0383dpads.pdf

Table. Comparison of RJK0383DPA with previous-generation devices

Product Name

Item

Max. Rating

On-Resistance, RDS(On) (m¥Ø)

QGD(a)
(nC)
VDD=10V

Package

VDSS

ID

VGS = 4.5V

VGS = 10V

typ.

max.

typ.

max.

RJK0383DPA

High-side MOS

30 V

15 A

12.0

16.8

8.5

11.1

1.5

WPAK
(Renesas
Technology
package
code)

[5.1 x 6.1mm
x 0.8mm,
max.]
or
[5.3 x 6.2 x 0.8
mm, max.]

Low-side MOS
(SBD(b) on-chip)

30 V

45 A

3.7

5.2

2.5

3.3

6.5

RJK0384DPA (Previous
generation
device)

High-side MOS

30 V

15 A

12.0

16.8

8.5

11.1

1.5

Low-side MOS
(SBD(b) on-chip)

30 V

42 A

4.3

6.0

2.9

3.8

5.2

RJK0389DPA
(Previous
generation
device)

High-side MOS

30 V

15 A

11.8

16.5

8.2

10.7

1.4

Low-side MOS
(SBD(b) on-chip)

30 V

20 A

10.5

14.7

6.8

8.9

2.2

(a) Drain-gate load (QGD)
(b) SBD: Schottky barrier diode

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