Cree, maker of silicon carbide (SiC) power semiconductors, has announced that its 230,000-sq ft engineering and production facility in Research Triangle Park, N.C. is operational. The new facility is producing the company’s advanced electronic devices based on silicon carbide (SiC) and gallium nitride (GaN).
“The new Cree site houses one of the first commercial SiC and GaN production facilities in the world devoted to serving the power and wireless infrastructure markets,” said John Palmour, Cree executive vice president for Advanced Devices. “SiC and GaN-based technologies enhance the performance of traditional power supply, motor drive and wireless communications systems by enabling the design of devices which provide significantly higher efficiencies than are available with similar silicon devices today. Cree is expanding its SiC and GaN production capabilities to continue to lead technology innovation for power and communications applications.”
Devices produced at the new Cree site include high-efficiency SiC power components for power supplies and motor drives. Cree is also developing SiC and GaN wide-bandgap radio frequency devices for the Department of Defense and WiMAX applications, and provides SiC and GaN MMIC foundry services for defense and general-purpose applications.