APEC Technical Session: Silicon Carbide MOSFETs for High Power Modules

A second generation SiC MOSFET enables systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200V MOSFETs deliver power density and switching efficiency at half the cost per amp of Cree's previous generation MOSFETs. At this price-performance point, they enable lower system costs for OEMs and provide additional savings to the end-user through increased efficiency and lower installation costs due to the lower size and weight of SiC-based systems.

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish