Power Electronics
Image courtesy of Efficient Power Conversion Corporation

Image courtesy of Efficient Power Conversion Corporation.

7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors

Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150°C and pulsed currents capabilities of 200 A (150 V EPC2034) and 140 A (EPC2033).  Applications include DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

These products further expand EPC's family of "Relaxed Pitch" devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

To simplify the evaluation process of these high performance eGaN FETs, the EPC9047 development board is available to support easy "in circuit" performance evaluation of the EPC2033. This board includes all the critical components that can be easily connected into any existing converter.

The EPC9047 is in a half-bridge topology measuring 2" x 1.5". It contains two EPC2033 eGaN FETs using the Texas Instruments UCC27611 gate driver, as well as supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance and has various probe points to facilitate simple waveform measurement and efficiency calculation. 

TAGS: Products
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