Power Electronics
600V GaN Transistor in a TO-247 Package

600V GaN Transistor in a TO-247 Package

Transphorm Inc. announced at APEC 2015 that it is now offering engineering samples of its TPH3205WS transistor, the first 600V GaN (Gallium Nitride) transistor in a TO-247 package. Offering 63 mOhm R(on) and 34A ratings, the device utilizes the company's Quiet TabTM source-tab connection design, which reduces EMI at high dv/dt to enable low switching loss and high-speed operation in power supply and inverter applications. This new device extends Transphorm's EZ-GaNTM product portfolio to now support PV inverter designs with power levels ranging from a few 100 watts (micro-inverters) to several kilowatts (residential central inverters).

At their APEC booth Transphorm demonstrated how its new TPH3205WS results in ultra-high-efficiency power conversion circuits. One live demo will feature a 2.4kW, bridgeless totem-pole PFC exhibiting near 99% PFC efficiency at 100 kHz operation. The totem-pole PFC, when combined with a GaN-based dc-dc conversion stage, enables a greatly simplified 80 PLUS titanium power supply design providing power densities unachievable with Si-based designs. Another live demo will showcase the TPH3205WS's superior dynamic R(on) performance. In 2009, Transphorm was the first company to overcome and demonstrate reliable and stable on resistance across the full range of switching voltages from dc to 400V. This newest device continues the company's achievement in this area with an R(on) increase under switching of only 5% at 400V, compared to other competitively rated devices with an almost 90% increase.

At APEC, Transphorm displayed a static demo of the TPH3205WS used in a 3kW inverter showing test results at 100 kHz and a peak efficiency of 98.8%, and over 99% at 50 kHz.

Engineering samples of the TPH3205WS are available now from stock and production release is scheduled at the end of June.

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