Power Electronics

600-V Superjunction MOSFETS Improve FOM

From Toshiba America Electronic Components, a family of twelve 600-V DTMOS II superjunction MOSFETs contributes to raising the efficiency of switched-mode power supplies, such as AC adapters in notebook and desktop computers, servers, flat panel displays, and ballasts. The DTMOS II MOSFETs employ a superjunction structure that enables a simultaneous reduction in both on-state resistance and gate charge, reducing the associated figure-of-merit (FOM) by 68% compared to conventional Toshiba MOSFET technology (see device specifications in the table below).

Device type: 600-V superjunction MOSFETs
Voltage rating (VDSS): 600 V
On-resistance (RDSON): as low as 0.19 Ω (max.) for the 20-A devices at VDS = 600 V.
Gate Charge(QG): as low as 14 nC
Current Rating (ID max): 12 A, 15 A, and 20 A
Features: RDS(ON) x Qg is approximately 68% less than the company’s conventional MOSFETs.
Operating temperature range (TJ): not available
Packaging: TO-3P(N), TO-220SIS, TO-220(W) and TFP, a compact surface mount package
RoHS compliant? not available
Target Applications: switched-mode power supplies, such as AC adapters in notebook and desktop computers, servers, flat panel displays, and ballasts.Pricing: $0.89 each in sample quantities
Pricing: starting at $1.30
Availability: samples are available now; the 12-A TK12A60U, 15-A TK15A60U, and 20-A TK20A60U are in mass production now; the remaining devices are scheduled to be in mass production by October 2008.
Datasheets posted on web? no.















Table. Specifications for 600-V DTMOS II superjunction MOSFETs


Part Number

Gate-Source Voltage
VDSS
(max.)

Drain Current
ID
(max.)

Drain-source ON resistance
RDS(ON) (max.) 2

Gate Charge,
Qg
(typ.) 3

Avalanche Energy (mJ)

Package

Planned Mass Production

Single Pulse4

Repetitive5

Toshiba
Package/
Dimensions (mm)

Industry Standard Equivalent

TK20J60U

+30V

20A

0.19 Ω

27nC

144

19

TO-3P(N)
15.9 x 23.3 x 4.8

TO-247AD

Sept. ‘08

TK20A60U

144

4

TO-220SIS
10 x 17.8 x 4.5

TO-220F
(Isolated)

Sept. ‘08

TK20D60U

144

19

TO-220(W)
10 x 17.8 x 4.5

TO-220
(Non-isolated)

Sept. ‘08

TK20X60U

144

15

TFP
9.2 x 10.7 x 3.0

N/A

Oct. ‘08

TK15J60U

+30V

15A

0.3 Ω

17nC

81

17

TO-3P(N)
15.9 x 23.3 x 4.8

TO-247AD

Now

TK15A60U

81

4

TO-220SIS
10 x 17.8 x 4.5

TO-220F
(Isolated)

Now

TK15D60U

81

17

TO-220(W)
10 x 17.8 x 4.5

TO-220
(Non-isolated)

Now

TK15X60U

81

12.5

TFP
9.2 x 10.7 x 3.0

N/A

Oct. ‘08

TK12J60U

+30V

12A

0.4 Ω

14nC

69

14

TO-3P(N)
15.9 x 23.3 x 4.8

TO-247AD

Sept. ‘08

TK12A60U

69

3.5

TO-220SIS
10 x 17.8 x 4.5

TO-220F
(Isolated)

Sept. ‘08

TK12D60U

69

14

TO-220(W)
10 x 17.8 x 4.5

TO-220
(Non-isolated)

Sept. ‘08

TK12X60U

69

10

TFP
9.2 x 10.7 x 3.0

N/A

Oct. ‘08

1 The product of on-state resistance and gate charge. The smaller this value is, the better the performance of the MOSFET.
2 VGS = 10V, ID = 10A (20A devices), 7.5A (15A devices), 6A (12A devices).
3 VDD = 400 V, VGS = 10V, ID = 20A (20A devices), 15A (15A devices), 12A (12A devices)
4 VDD = 90V, Tch =25°C (initial), RG = 25 ohm,

  • L = 0.63 mH, IAR = 20A (20A devices).
  • L = 0.63 mH, IAR = 15A (15A devices).
  • L = 0.84 mH, IAR = 12A (12A devices).
5 Repetitive rating: pulse width limited by maximum channel temperature.
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