Power Electronics
600 V Fast Body Diode N-Channel MOSFETs

600 V Fast Body Diode N-Channel MOSFETs

Vishay Intertechnology, Inc. introduced the first two devices in its new 600 V EF Series of fast body diode n-channel power MOSFETs. With low reverse recovery charge and on-resistance, the Vishay Siliconix SiHx28N60EF and SiHx33N60EF increase reliability and save energy in industrial, telecom, computing, and renewable energy applications.

Built on second-generation Super Junction Technology, the 600 V fast body diode MOSFETs released today provide a complement to Vishay's existing standard E Series components, expanding the company's offering to devices that can be used in zero voltage switching (ZVS)/soft switching topologies such as phase-shifted bridges and LLC converter half bridges.

The SiHx28N60EF and SiHx33N60EF increase reliability in these applications by offering a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. This allows the devices to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress. In addition, the reduced Qrr results in lower reverse recovery losses compared with standard MOSFETs.

Offered in four packages, the 28 A SiHx28N60EF and 33 A SiHx33N60EF feature ultra-low on-resistance of 123 W and 98 W, respectively, and low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecom power systems, ATX/silver box PC SMPS, welding equipment, UPS, battery chargers, semiconductor capital equipment, and LED and HID lighting. The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are RoHS-compliant and halogen-free.

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