IXYS Corporation announces the release of the new 3600V Reverse Conducting IGBTs (BiMOSFETs™). Featuring "free" intrinsic body diodes and current ratings from 45A to 125A, these devices present combined strengths of both MOSFETs and IGBTs. They are ideal for high speed, high voltage, and high current power conversion applications.
By using these high voltage BiMOSFETs™, power circuit designers can eliminate multiple series-parallel lower voltage, lower current rated devices, thereby reducing the number of power components required and simplifying their associated gate drive circuitry. This results in much simpler system designs with lower costs and improved reliability.
Also, if needed, thanks to the positive temperature coefficient of the on-state voltage and diode forward voltage, these devices can be operated in parallel to meet even higher current requirements. Furthermore, during the turn-off transition, the intrinsic body diode provides a path for the inductive load current, suppressing high voltage transients from inflicting damage to the device.
The new 3600V BiMOSFETs™ can be utilized in a number of power switching systems, including switched mode and resonant mode power supplies, uninterruptible power supplies, laser and X-ray generators, capacitor discharge circuits and AC switches.
These reverse conducting IGBTs are available in the following international standard size packages: ISOPLUS i4-Pak™, ISOPLUS i5-Pak™, and TO-247PLUS-HV. The first two packages provide an electrical isolation of 4000V through the Direct Copper Bond (DCB) substrate technology. The TO-247PLUS-HV has an increased creepage distance between leads, making it possible to withstand higher voltages. The part numbers include IXBF20N360, IXBF50N360, IXBL60N360, and IXBX50N360HV, with collector current ratings of 45A, 70A, 92A and 125A, respectively.