Power Electronics
300 V Gallium Nitride Power Transistors for High Frequency Applications

300 V Gallium Nitride Power Transistors for High Frequency Applications

EPC announces the EPC2025, a 300 V power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density.  Applications enhanced by higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, power inverters, and LED lighting.

The EPC2025 has a voltage rating of 300 V and maximum RDS(ON) of 150 mW with a 4 A output. It is available in passivated die form with solder bars for efficient heat dissipation and ease of assembly. The EPC2025 measures 1.95 mm x 1.95 mm for increased power density.

The EPC9042 development board is a 300 V maximum device voltage, half bridge with onboard gate driver, featuring the EPC2025, onboard gate drive supply and bypass capacitors.  This 2" x 1.5" board has been laid out for optimal switching performance and contains all critical components for easy evaluation of the 300 V EPC2025 eGaN® FET.

The EPC2025 eGaN FETs are priced for 1K units at $5.29 each The EPC9042 development boards are priced at $137.75 each.

 

 

TAGS: Products
Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish