Power Electronics
1200-V IGBTs Deliver High Power Density

1200-V IGBTs Deliver High Power Density

A family of rugged 1,200-V,  ultra-fast insulated-gate bipolar transistors (IGBTs) from International Rectifier are optimized for industrial motor drive and UPS systems.    

The new devices leverage IR's field stop trench ultra-thin wafer technology that delivers lower conduction and switching losses. Co-packaged with a soft recovery low Qrr diode and featuring a 10 us minimum short circuit time rating, the devices are optimized for rugged industrial applications.

The packaged devices cover a broad current range from 10 - 50A. Other key performance benefits include Tjmax of 150°C, positive VCE(on) temperature coefficient for easy paralleling and low VCE(on) to reduce power dissipation and achieve higher power density.  Die products are also available. The devices are RoHS compliant.

Pricing for the IRG7PH37K10D begins at US $3.85 each respectively in 10,000-unit quantities. Production orders are available immediately.  

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