Advanced Packaging, Ultrahigh Speed Process Aid MOSFET's Efficiency
Combining advanced packaging with an ultrahigh-speed U-MOS III process, Irvine, Calif.-based Toshiba America Electronic Components has developed a new line of power MOSFETs that boasts higher output current and 50% improvement in power dissipation. According to the developer, the new packaging is also approximately 37% thinner and saves mount area on pc-boards. The line of SOP Advance MOSFETs is targeted for synchronous rectification applications in dc-dc converters and other power supplies designed for mobile computers and portable electronics.
Toshiba's new ultrahigh-speed U-MOS III technology enables super high-speed switching and very low drain source on-state resistance (RDS (ON)). According to the manufacturer, the innovative SOP packaging technology enables up to approximately a 220% improvement in current output compared to Toshiba's standard SOP-8 MOSFETs. As a result, Toshiba's new power MOSFETs include a 30V, 35A device designated TPCA8003-H, and a 30V, 40A device designated TPCA8004-H. The first members of the family of SOP Advance MOSFETs are n-channel single devices.
Toshiba's SOP Advance packaging is only 1mm in height, which is approximately a 37% reduction in thickness compared to its standard SOP-8 packaging. The new package has a compact 30-mm2 footprint area, and uses flat, lead-free leads connected to a spreader to improve thermal resistance, reduce package resistance loss and enable higher current output. The two new SOP Advance MOSFETs feature high power dissipation with approximately 50% improved thermal resistance and package resistance of only 0.5mΩ.
For more information, visit www.chips.toshiba.com, phone: (408) 526-2400, or fax: (408) 526-2410.
Performance-Enhanced DirectFET™ MOSFET Chip
International Rectifier (IR), El Segundo, Calif., offers the smallest control and synchronous MOSFET chip set for existing and next-generation VRM10.x high-current synchronous buck converters. The IRF6608 control MOSFET has 8.5mΩ typical on-resistance (RDS(on)), while the IRF6618 synchronous MOSFET has 1.7mΩ typical on-resistance.
The IRF6608 is 50% smaller than the standard SO-8 package and is the first HEXFET® MOSFET housed in the new double-side-cooled, surface-mount DirectFET “S” package. The profile is 0.7mm, compared to 1.75mm for SO-8. In addition, it boasts as much as 10% better on-resistance, reduced gate charge (QG) and gate-to-drain charge (QGD) characteristics compared to similar control MOSFETs on the market, delivering over 2% more overall efficiency.
The IRF6618 has a typical on-resistance of 1.7mΩ and a maximum of 2.2mΩ — a 25% improvement compared to similar devices — and is ideal for the synchronous MOSFET application, where low conduction loss is important. It also can be used for secondary side synchronous rectification in high-current, isolated dc-dc converters.
The chip set enables designers to make a very-low-profile power converter (0.98 in.) for 1U (1.75-in. high) rack-sized server systems that meet VRM 10.x specifications. It's also suitable for buck converters in servers and point-of-load converters in telecom and netcom systems.
For more information, visit www.irf.com.
EMI Filter for DC-DC Converter Applications
Andover, Mass.-based Picor, a subsidiary of Vicor Corp., recently introduced the QPI-1 active EMI filter for 48V dc-dc converter applications. The QPI-1 delivers more than 40dB of common-mode and more than 80dB of differential-mode noise attenuation at 500kHz from a 1-in. × 1-in. × 0.2-in. (24.5-mm × 24.5-mm × 5.1-mm) surface-mount package. It's the first active EMI filter for the telecom bus market, and offers 50% to 80% board space savings over other solutions.
Active filtering eliminates ringing on the input of the converter in response to load and line transients. Unlike passive solutions, the QPI-1 attenuates noise over the entire frequency range. There are no resonant elements that can amplify the noise.
The QPI-1 meets the specifications of the international 36Vdc to 76Vdc telecom bus, including the 100V, 100ms surge. Rated at 12A, the unit supports single or multiple dc-dc converters up to 576W at nominal line voltage. The QPI's ratings support the PICMG 3.0 Advanced Telecom Computing Architecture (ATCA) specification, requiring system boards to be filtered to EN 55022 limits at 200W per system board. Units can be placed in series for higher attenuation or paralleled for higher currents.
The QPI-1 requires only 20% to 30% of the volume and 30% to 50% of the area of similarly rated passive filters. The LGA or BGA package is rated for operation over a case temperature range of -40°C to 100°C with an efficiency of 99%.
The QPI-1 supports all dc-dc converters in IT, Telecom and other 48Vdc applications requiring efficient filtering in small spaces.
For more information, visit www.picorpower.com.
Murata Electronics Expands Chip Monolithic Ceramic Capacitor Line
Murata Electronics, Smyrna, Ga., is offering a new line of miniaturized chip monolithic ceramic capacitors. These components employ ultrathin dielectric layers, multiple case sizes, X5R characteristics, and increased capacitance (up to 100µF) and voltage values (6.3V). With these factors in place, Murata's capacitors can be used for decoupling circuits in lieu of their aluminum or tantalum counterparts.
This is significant, as the trend toward more functional and highly reliable electronic devices drive the industry's need for smaller, higher capacitance monolithic capacitors.
Also, the low equivalent series resistance (ESR) and the temperature stability give the monolithic capacitor a competitive advantage over other electrolytics. Commonly used for electronic devices, this enhanced capacitor line is intended for use in mobile communications equipment, digital audiovisual equipment, personal computers and other related devices.
For more information, visit www.murata-northamerica.com.