SiC and GaN vs. IGBTs: The Imminent Tug of War for Supremacy (.PDF Download)

After years of R&D in the lab, compound semiconductor materials like silicon carbide (SiC) and gallium nitride (GaN) used for ICs are taking a bigger role in handling electrical power. These wide-bandgap (WBG) devices are ready to carve out a niche in applications that demand the ability to work at high voltages and temperatures while demonstrating high efficiency. They’re poised to take over designs based on insulated-gate bipolar transistor (IGBT) technology.

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